A generic model for the study of supercontinuum generation in graphene-covered nanowires

Abstract We study supercontinuum (SC) generation in graphene-covered nanowires based on a generic model that correctly accounts for the evolution of photon number under Kerr and two-photon absorption processes, influence graphene is treated within framework saturable photoexcited-carrier refraction. discuss role various effects SC by thorough analysis short-pulse propagation two different kinds nanowires, one made silicon nitride other silicon. Finally, we effect stacking layers as means to enhance with pulse powers compatible those integrated optical devices.